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LPE Growth of III-V Semiconductors from rare-earth Treated Melts
Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel
We focus on the characterization of InP and InGaAsP layers prepared by liquid phase epitaxy with rare-earth admixtures. We applied photoluminescence spectroscopy (PL), capacitance-voltage measurements, and secondary ion mass spectroscopy in order to explain: (i) the gettering effect and conductivity crossover of InP layers for Pr treated samples, (ii) narrowing of the PL and elecroluminescent spectra of the active InGaAsP region of a double-heterostructure LED.
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Růst InP metodou LPE s přídavkem prvků vzácných zemin do taveniny
Grym, Jan ; Procházková, Olga ; Zavadil, Jiří ; Žďánský, Karel
Addition of REs to the growth melt is known to have purifying effect on AIIIBV LPE layers. Each member of REs family acts in its own way. Small addition of Tb, Dy, Tm, and Pr leads to pronounced gettering of shallow donors, the high purity n-type InP can be grown. Exceeding certain concentration, reversal of conductivity type from n to p occurs. Addition of Tm during growth on InP:Fe substrates always results in the preparation of semi-insulating layers due to Fe out-diffusion mediated by RE admixture.
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Asymetrie krystalografických pórů v polovodičích A.sup.3./sup. B.sup.5./sup
Nohavica, Dušan ; Gladkov, Petar ; Jarchovský, Zdeněk
In the contribution the crucial influence of the (011) planes nonequivalence on pores formation in InP and some other A.sup.3./sup. B.sup.5./sup. semiconductors is demonstrated. In plane (01-1) are three different, crystallographically oriented (CO) sets of pores with three different orientations. In the perpendicular plane (011) triangular crossing points are observable. Heat treatment of the InP plates containing pores produce spherical figures which we have used to decrease the dislocation density in epitaxial layers by mechanism of the ELO.
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Physical properties of InP epitaxial layers prepared with dysprosium admixture
Grym, Jan ; Procházková, Olga
Physical properties of commonly prepared InP layers grown by LPE technique and those grown from Dy treated melt are compared. The layers were examined by SEM, low temperature PL spectroscopy, C-V measurements and temperature dependent Hall effect. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presence of Dy and its concentration in the melt. When increasing the concentration of Dy the reversal of electrical conductivity occurs.
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